| PART |
Description |
Maker |
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263 |
128Mbit GDDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
| M59PW1282 M59PW12821 M59PW1282-100M1T M59PW1282120 |
128Mbit (two 64Mb, x16, Uniform Block, LightFlash?? 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash) 3V Supply, Multiple Memory Product
128Mbit (two 64Mb x16 Uniform Block LightFlash) 3V Supply Multiple Memory Product
128Mbit (two 64Mb, x16, Uniform Block, LightFlash? 3V Supply, Multiple Memory Product
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| V54C3128 |
128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic, Corp.
|
| KM44S32030B KM44S32030BT-G_F10 KM44S32030BT-G_F8 |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| HY57V281620HCTP-H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
|
Hynix Semiconductor
|
| HY27US16281A |
(HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
|
Hynix Semiconductor
|
| V55C2128164VT V55C2128164VB |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
